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| automotive grade gds gate drain source d-pak AUIRFR5410 features advanced planar technology p-channel mosfet low on-resistance dynamic dv/dt rating 175c operating temperature fast switching fully avalanche rated repetitive avalanche allowed up to tjmax lead-free, rohs compliant automotive qualified * description specifically designed for automotive applications, this cellular planar design of hexfet? power mosfets utilizes the latest processing techniques to achieve low on-resistance per silicon area. this benefit combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications. hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ www.irf.com 1 absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. v (br)dss -100v r ds(on) max. 0.205 ? i d -13a parameter units i d @ t c = 25c continuous drain current, v gs @ 10v i d @ t c = 100c continuous drain current, v gs @ 10v a i dm pulsed drain current p d @t c = 25c power dissipation w linear derating factor w/c v gs gate-to-source voltage v e as single pulse avalanche energy (thermally limited) mj i ar avalanche current a e ar repetitive avalanche energy mj dv/dt peak diode recovery dv/dt v/ns t j operating junction and t stg storage temperature range c soldering temperature, for 10 seconds (1.6mm from case ) thermal resistance parameter typ. max. units r ? jc junction-to-case ??? 1.9 r ? ja junction-to-ambient (pcb mount) ??? 50 c/w r ? ja junction-to-ambient ??? 110 -55 to + 150 300 66 0.53 20 max. -13 -8.2 -52 -5.0 6.3 194 -8.4 s d g 2 www.irf.com !"# $ % & ' ( )*+, - ( . /, ( ) ? , 0 ( 12 34 $ 5 & i sd ? 12 34, ? 46, 7 ? 7 , ' ? )*+ 8 ?? 96 " " ?? : ' %# 0184;, - #% 184; " #% "#" < 0 5=)9> "## ? # # @ a 8+b $5 1. # 1 c & 5# " # %## # "a % # "# # d4>1==. r ?? is measured at tj approximately 90c. s d g s d g static electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage -100 ??? ??? v ? ? ? a ??? ??? -250 i gss gate-to-source forward leakage ??? ??? 100 na gate-to-source reverse leakage ??? ??? -100 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge ??? ??? 58 q gs gate-to-source charge ??? ??? 8.3 nc q gd gate-to-drain ("miller") charge ??? ??? 32 t d(on) turn-on delay time ??? 15 ??? t r rise time ??? 58 ??? t d(off) turn-off delay time ??? 45 ??? ns t f fall time ??? 46 ??? l d internal drain inductance ??? 4.5 ??? between lead, nh 6mm (0.25in.) l s internal source inductance ??? 7.5 ??? from package and center of die contact c iss input capacitance ??? 760 ??? c oss output capacitance ??? 260 ??? pf c rss reverse transfer capacitance ??? 170 ??? diode characteristics parameter min. typ. max. units i s continuous source current ??? ??? -13 (body diode) a i sm pulsed source current ??? ??? -52 (body diode) v sd diode forward voltage ??? ??? -1.6 v t rr reverse recovery time ??? 130 190 ns q rr reverse recovery charge ??? 650 970 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) conditions v gs = -10v v dd = =-50v i d = -8.4a r g = 9.1 ? t j = 25c, i f = -8.4a di/dt = 100a/ s conditions v gs = 0v, i d = -250 a reference to 25c, i d = -1ma v gs = -10v, i d = -7.8a v ds = v gs , i d = -250 a v ds = -100v, v gs = 0v v ds = -80v, v gs = 0v, t j = 150c mosfet symbol showing the integral reverse p-n junction diode. v ds = -25v, i d = -7.8a i d = -8.4a v ds = -80v conditions r d = 6.2 ? v gs = 0v v ds = -25v ? = 1.0mhz v gs = 20v v gs = -20v www.irf.com 3 !! ""#! $ % &$' ()(* # * " qualification information ? d-pak msl1 qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. ir?s industrial and consumer qualification level is granted by extension of the higher automotive level. charged device model class c5 (1125v) aec-q101-005 moisture sensitivity level rohs compliant yes esd machine model class m2 (200v) aec-q101-002 human body model class h1b (1000v) aec-q101-001 4 www.irf.com +# ,- ."/# /0 - ' /0 - ' /0 / ' 0.01 0.1 1 10 100 0.1 1 10 100 20 s pulse width t = 25 c j top bottom vgs -15v -10v -8.0v -7.0v -6.0v -5.5v -5.0v -4.5v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -4.5v 0.1 1 10 100 0.1 1 10 100 20 s pulse width t = 150 c j top bottom vgs -15v -10v -8.0v -7.0v -6.0v -5.5v -5.0v -4.5v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -4.5v 0.1 1 10 100 4 5 6 7 8 9 10 v = 10v 20 s pulse width ds -v , gate-to-source voltage (v) -i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -10v -14a www.irf.com 5 1 %# #2 - 3& /0 4 ' 3." 4 2 . 3 /0 ' ." 2 . 3 /0 2 5 . 3 0.1 1 10 100 0.2 0.8 1.4 2.0 2.6 -v ,source-to-drain voltage (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 0 400 800 1200 1600 2000 1 10 100 c, capacitance (pf) a ds -v , drain-to-source voltage (v) v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 10 20 30 40 50 60 0 5 10 15 20 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 -8.4a v = -20v ds v = -50v ds v = -80v ds 1 10 100 1000 1 10 100 1000 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c -v , drain-to-source voltage (v) -i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms 6 www.irf.com 1 %# #$6/ / # # 78 ' 1 %# # ' ." ' /# 2 3/#/' 2 3/#9 6# 7 17 ???? ??????? 7 7 < ' + - v ds 90% 10% v gs t d(on) t r t d(off) t f 25 50 75 100 125 150 0 3 6 9 12 15 t , case temperature ( c) -i , drain current (a) c d 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) www.irf.com 7 4 ' 3/' : 4 ' 39 6# 1 %# #&6 $30 ." ' q g q gs q gd v g charge (). d.u.t. v ds i d i g -3ma v gs .3 ? f 50k ? .2 ? f 12v current regulator same type as d.u.t. current sampling resistors + - ; # 69 6# ; # 6/' t p v ( br ) dss i as r g i as 0.01 ? t p d.u.t l v ds v dd driver a 15v -20v 1 e 7 25 50 75 100 125 150 0 100 200 300 400 500 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom -3.5a -4.9a -7.8a 8 www.irf.com p.w. period di/dt diode recovery dv/dt ripple ? 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - 7 ??? "## ??? 0 "## 5"# @@ ??? < ' 1 " < ' < +" - # +# # ????? -# 0"" ???? # 8 ???? -# - f 0"" + ' %# < 8# #% < ' %# 81+ 7 => <<< 7 ( ) 7 %# -#" - 97 " 5' ?$@5$/2 www.irf.com 9 d-pak part marking information ' aba 99b9c9c &b& #6 + # d3 d' 10 www.irf.com ! "# $ tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch www.irf.com 11 ordering information base part number package type standard pack complete part number form quantity AUIRFR5410 dpak tube 75 AUIRFR5410 tape and reel 2000 AUIRFR5410tr tape and reel left 3000 AUIRFR5410trl tape and reel right 3000 AUIRFR5410trr 12 www.irf.com unless specifically designated for the automotive market, international rectifier corporation and its subsidiaries (ir) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. part numbers designated with the ?au? prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. all products are sold subject to ir?s terms and conditions of sale supplied at the time of order acknowledgment. ir warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with ir?s standard warranty. testing and other quality control techniques are used to the extent ir deems necessary to support this warranty. except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. ir assumes no liability for applications assistance or customer product design. customers are responsible for their products and applications using ir components. to minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. reproduction of ir information in ir data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. reproduction of this information with alterations is an unfair and deceptive business practice. ir is not responsible or liable for such altered documentation. information of third parties may be subject to additional restrictions. resale of ir products or serviced with statements different from or beyond the parameters stated by ir for that product or service voids all express and any implied warranties for the associated ir product or service and is an unfair and deceptive business practice. ir is not responsible or liable for any such statements. ir products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure o f the ir product could create a situation where personal injury or death may occur. should buyer purchase or use ir products for any such unintended or unauthorized application, buyer shall indemnify and hold international rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ir was negligent regarding the design or manufacture of the product. ir products are neither designed nor intended for use in military/aerospace applications or environments unless the ir products are specifically designated by ir as military-grade or ?enhanced plastic.? only products designated by ir as military-grade meet military specifications. buyers acknowledge and agree that any such use of ir products which ir has not designated as military-grade is solely at the buyer?s risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. ir products are neither designed nor intended for use in automotive applications or environments unless the specific ir products are designated by ir as compliant with iso/ts 16949 requirements and bear a part number including the designation ?au?. buyers acknowledge and agree that, if they use any non-designated products in automotive applications, ir will not be responsible for any failure to meet such requirements. for technical support, please contact ir?s technical assistance center http://www.irf.com/technical-info/ world headquarters: 233 kansas st., el segundo, california 90245 tel: (310) 252-7105 |
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